1 April 2006 Passive silicon-on-insulator polarization-rotating waveguides
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Abstract
We present preliminary experimental results for silicon-on-insulator polarization rotators with asymmetric external waveguiding layers. These devices consist of a waveguide with vertical and sloped sidewalls and are fabricated using a combination of plasma and chemical etching techniques. For a device length of 3256 µm, a TE-to-TM polarization conversion efficiency of 75% was measured.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Chris Brooks, Chris Brooks, Paul E. Jessop, Paul E. Jessop, Henghua Deng, Henghua Deng, David Yevick, David Yevick, N. Garry Tarr, N. Garry Tarr, } "Passive silicon-on-insulator polarization-rotating waveguides," Optical Engineering 45(4), 044603 (1 April 2006). https://doi.org/10.1117/1.2188408 . Submission:
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