1 April 2006 Passive silicon-on-insulator polarization-rotating waveguides
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Optical Engineering, 45(4), 044603 (2006). doi:10.1117/1.2188408
Abstract
We present preliminary experimental results for silicon-on-insulator polarization rotators with asymmetric external waveguiding layers. These devices consist of a waveguide with vertical and sloped sidewalls and are fabricated using a combination of plasma and chemical etching techniques. For a device length of 3256 µm, a TE-to-TM polarization conversion efficiency of 75% was measured.
Chris Brooks, Paul E. Jessop, Henghua Deng, David Yevick, N. Garry Tarr, "Passive silicon-on-insulator polarization-rotating waveguides," Optical Engineering 45(4), 044603 (1 April 2006). http://dx.doi.org/10.1117/1.2188408
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KEYWORDS
Waveguides

Polarization

Silicon

Etching

Oxides

Reactive ion etching

Integrated optics

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