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1 April 2007 Fabrication of Yb3+:Er3+ co-doped Al2O3 ridge waveguides by the dry etching
Qi Song, Jinsong Gao, Xiaoyi Wang, Hong Chen, Xuanming Zheng, Tongtong Wang, Cheng-Ren Li, Changlie Song
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Optical Engineering, Vol. 46, Issue 4, 040509 (April 2007). https://doi.org/10.1117/1.2721529
Abstract
We present the fabrication process of straight-ridge Yb3+:Er3+ co-doped Al2O3 waveguides. Thin films are synthesized on silica-on-silicon wafers by middle frequency sputtering (MFS) and microwave ECR (MW-ECR) plasma source deposition. Waveguides are developed by reactive plasma etching employing BCl3 gas. Photoluminescence (PL) spectrum and gain measurements at 1.53 μm are investigated at room temperature: a net gain of 5.225 dB/cm is achieved from a 10.5-mm-long waveguide obtained by MFS, and 0.043 dB/cm is achieved from a MW-ECR with a 980-nm pump power of 62 mW.
©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)
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Qi Song, Jinsong Gao, Xiaoyi Wang, Hong Chen, Xuanming Zheng, Tongtong Wang, Cheng-Ren Li, and Changlie Song "Fabrication of Yb3+:Er3+ co-doped Al2O3 ridge waveguides by the dry etching," Optical Engineering 46(4), 040509 (1 April 2007). https://doi.org/10.1117/1.2721529
Published: 1 April 2007
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Cited by 2 scholarly publications.
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KEYWORDS
Waveguides
Aluminum
Erbium
Thin films
Ytterbium
Plasma
Dry etching
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