1 May 2007 Nonvolatile hologram storage in In:Fe:Mn:LiNbO3
Author Affiliations +
Optical Engineering, 46(5), 055802 (2007). doi:10.1117/1.2734991
Abstract
We describe the performance of two-center hologram storage in In:Fe:Mn:LiNbO3. The doping content of MnO and the oxidation state that yield the maximum nonvolatile diffraction efficiency in In:Fe:Mn:LiNbO3 (0.080 wt % Fe2O3, 3 mol % In3+) are discussed.
DongDong Teng, Biao Wang, Tao Geng, Wei Yuan, Furi Ling Fu, "Nonvolatile hologram storage in In:Fe:Mn:LiNbO3," Optical Engineering 46(5), 055802 (1 May 2007). http://dx.doi.org/10.1117/1.2734991
JOURNAL ARTICLE
4 PAGES


SHARE
KEYWORDS
Doping

Iron

Holograms

Manganese

Oxidation

Diffraction

Crystals

Back to Top