High-speed polymer/silicon on insulator ring resonator switch

Michael Gad; David Yevick; Paul E. Jessop

doi:10.1117/1.2978947

1 September 2008 High-speed polymer/silicon on insulator ring resonator switch

Michael Gad, David Yevick, Paul E. Jessop

Author Affiliations +

Optical Engineering, Vol. 47, Issue 9, 094601 (September 2008). https://doi.org/10.1117/1.2978947

Abstract

We design a high-speed tunable electro-optical (EO) polymer-clad silicon over insulator (SOI) racetrack resonator with a 80-μm length and 5-µm radius that exhibits a switching speed of 100 GHz, a tuning voltage of 6.81 V, and an extinction ratio of 109.55 dB. This work employs high electro-optical coefficient polymers (r₃₃=1000 pm/V), which are currently under development, to implement very high speed switches.

©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Michael Gad, David Yevick, and Paul E. Jessop "High-speed polymer/silicon on insulator ring resonator switch," Optical Engineering 47(9), 094601 (1 September 2008). https://doi.org/10.1117/1.2978947

Published: 1 September 2008

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