1 October 2008 Fabrication, characterization, and optimization of an ultraviolet silicon sensor
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Abstract
This work shows the design, fabrication, and optimization of a silicon sensor with an extended sensing range toward the UV region. The main characteristic of this detector is the enlargement of the common silicon detection range to the ultraviolet region (240 to 400 nm). The fabrication process of this detector is compatible with complementary metal oxide semiconductor (CMOS) silicon technology, which makes it cheaper than commercial UV detectors.
© (2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Dainet Berman Mendoza, Dainet Berman Mendoza, M. Aceves-Mijares, M. Aceves-Mijares, Luís Raúl Berriel-Valdos, Luís Raúl Berriel-Valdos, Jorge Pedraza, Jorge Pedraza, Alicia Vera-Marquina, Alicia Vera-Marquina, } "Fabrication, characterization, and optimization of an ultraviolet silicon sensor," Optical Engineering 47(10), 104001 (1 October 2008). https://doi.org/10.1117/1.3000434 . Submission:
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