1 March 2008 Modeling of temperature-dependent resistance in micro- and nanopolycrystalline VO2 thin films with random resistor networks
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Optical Engineering, 47(3), 033801 (2008). doi:10.1117/1.2894146
Abstract
Micro- and nanopolycrystalline VO2 thin films with hysteretic first-order metal-insulator transition were fabricated by the reactive ion-beam sputtering method. The phase transition temperatures of the micro- and nanopolycrystalline films are at 68 and 45° C, respectively. Using the random-resistor-network model, the characteristics of hysteretic resistance versus temperature are simulated for these films. The modeling results are checked against the experimental measurements. There is satisfactory agreement between the calculated resistance-temperature trajectories and the measured major hysteresis loops for both micro- and nanopolycrystalline films over the whole temperature range from the low-temperature semiconductor behavior to the high-temperature metallic state, which gives strong support to the present approach.
Jun Dai, Xingzhi Wang, Ying Huang, Xinjian Yi, "Modeling of temperature-dependent resistance in micro- and nanopolycrystalline VO2 thin films with random resistor networks," Optical Engineering 47(3), 033801 (1 March 2008). http://dx.doi.org/10.1117/1.2894146
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KEYWORDS
Thin films

Resistance

Semiconductors

Particles

Resistors

Transition metals

Temperature metrology

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