1 June 2008 Fast-response photoconductive metal-semiconductor-metal ultraviolet detector based on ZnO film grown by radio-frequency magnetron sputtering
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Abstract
ZnO thin films were grown on SiO2/Si substrates by radio-frequency magnetron sputtering. Based on the ZnO film, a photoconductive metal-semiconductor-metal ultraviolet detector was fabricated by a liftoff technique. Its I-V characteristics were observed at 365 nm, and a fast response was observed by illumination with a KrF excimer laser.
© (2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Xuming Bian, Xuming Bian, Jingwen Zhang, Jingwen Zhang, Zhen Bi, Zhen Bi, Dong Wang, Dong Wang, Xin'an Zhang, Xin'an Zhang, Xun Hou, Xun Hou, } "Fast-response photoconductive metal-semiconductor-metal ultraviolet detector based on ZnO film grown by radio-frequency magnetron sputtering," Optical Engineering 47(6), 064001 (1 June 2008). https://doi.org/10.1117/1.2939091 . Submission:
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