1 October 2010 Tunable, high beam quality and narrow linewidth semiconductor disk laser
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Abstract
We present a tunable, high beam quality and narrow linewidth semiconductor disk laser. The maximum output power is 160 mW, and the slope efficiency is 22% using a gain chip without any postprocess under room temperature. When a 40-µm uncoated glass etalon is employed to tune the wavelength, the maximum output power of 110 mW, the tuning range of ~10 nm, the narrow linewidth of 0.07 nm, and the M2 factor of 1.03 are obtained. The tunability of the laser is theoretically analyzed, and the results are in good agreement with experiments.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Peng Zhang, Peng Zhang, Yanrong Song, Yanrong Song, Xinping Zhang, Xinping Zhang, Jinrong Tian, Jinrong Tian, Chennupati Jagadish, Chennupati Jagadish, Hark Hoe Tan, Hark Hoe Tan, Zhigang Zhang, Zhigang Zhang, } "Tunable, high beam quality and narrow linewidth semiconductor disk laser," Optical Engineering 49(10), 104201 (1 October 2010). https://doi.org/10.1117/1.3490418 . Submission:
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