1 November 2010 Small-signal parameters of quantum dash lasers with multiple coupled energy states
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Abstract
The small-signal parameters of quantum dash (QDash) lasers with multiple coupled energy states have been derived using a rate equation model. Analytical expressions for the small-signal differential gain, resonance frequency, and recombination lifetime have been derived. The linewidth enhancement factor of QDash lasers with multiple coupled energy states is studied using our derived model. With the help of our model, we find that introducing p-type doping in the active region of the QDash layer does not enhance the small-signal resonant frequency, but reduces the small-signal recombination lifetime and the linewidth enhancement factor. Also, we find that increasing the n-type doping concentration decreases slightly the small-signal recombination lifetime and the resonant frequency, and increases slightly the linewidth enhancement factor. Our analysis reveals that an undoped QDash laser can be designed to operate at the second excited state energy and to yield high modulation bandwidth and low linewidth enhancement factor.
©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Omar Qasaimeh "Small-signal parameters of quantum dash lasers with multiple coupled energy states," Optical Engineering 49(11), 114202 (1 November 2010). https://doi.org/10.1117/1.3509369
Published: 1 November 2010
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KEYWORDS
Doping

Modulation

Data modeling

Optical engineering

Laser damage threshold

Semiconductor lasers

Quantum dots

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