1 June 2010 Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
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Abstract
In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44×10−4, and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from −1.38 to −2.17 GPa, depending on the beam voltage. The residual stress is reduced from −2.17 to −1.40 GPa when the film is divided into four layers with three interfaces.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Cheng-Chung Lee, Kun-Hsien Lee, Chien-Jen Tang, Cheng-Chung Jaing, Hsi-Chao Chen, "Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition," Optical Engineering 49(6), 063802 (1 June 2010). https://doi.org/10.1117/1.3456708 . Submission:
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