Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

Cheng-Chung Lee; Kun-Hsien Lee; Chien-Jen Tang; Cheng-Chung Jaing; Hsi-Chao Chen

doi:10.1117/1.3456708

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1 June 2010 Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

Cheng-Chung Lee, Kun-Hsien Lee, Chien-Jen Tang, Cheng-Chung Jaing, Hsi-Chao Chen

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Optical Engineering, 49(6), 063802 (2010). https://doi.org/10.1117/1.3456708

Abstract

In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44×10−4, and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from −1.38 to −2.17 GPa, depending on the beam voltage. The residual stress is reduced from −2.17 to −1.40 GPa when the film is divided into four layers with three interfaces.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Cheng-Chung Lee, Kun-Hsien Lee, Chien-Jen Tang, Cheng-Chung Jaing, and Hsi-Chao Chen "Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition," Optical Engineering 49(6), 063802 (1 June 2010). https://doi.org/10.1117/1.3456708

Published: 1 June 2010

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