1 June 2011 Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes
Krzysztof Jozwikowski, Malgorzata Kopytko, Antoni Rogalski
Author Affiliations +
Abstract
An enhanced original computer program is applied to explain in detail the influence of the photon recycling effect on carrier lifetime in a selected 3-μm n-on-p HgCdTe photodiode structure. The computer program is based on solution of carrier and photon transport equations for practical photodiode design. As a result, both distribution of thermal carrier generation and recombination rates and spatial photon density distribution in photodiode structures have been obtained. It is clearly shown that the photon recycling effect drastically limits the influence of radiative recombination on performance of HgCdTe photodiodes. A general conclusion confirms previous Humpreys' ascertainment that the radiative recombination, although of fundamental nature, does not limit the ultimate performance of HgCdTe photodiodes.
©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Krzysztof Jozwikowski, Malgorzata Kopytko, and Antoni Rogalski "Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes," Optical Engineering 50(6), 061003 (1 June 2011). https://doi.org/10.1117/1.3572167
Published: 1 June 2011
Lens.org Logo
CITATIONS
Cited by 21 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photodiodes

Mercury cadmium telluride

Semiconductors

Absorption

Photon transport

Optical engineering

Remote sensing

RELATED CONTENT


Back to Top