1 October 2011 Laser direct write of silicon nanowires
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Optical Engineering, 50(10), 104301 (2011). doi:10.1117/1.3630225
Using laser direct writing in combination with chemical vapor deposition to produce nanometer scale electronics holds several advantages over current large scale photolithography methods. These include single step electrical interconnect deposition, mask-less patterning, and parallel processing. When taken together they make quick production of individualized electronic circuits possible. This work demonstrates the ability of combining laser direct write and chemical vapor deposition to produce silicon wires a few hundred nanometers wide. Optimized parameters will be discussed, with a particular emphasis paid to the laser-material interactions. The feasibility for electronic applications will be shown by examining the deposition formation on a silicon dioxide surface without degrading the surface's integrity, and by evaluating the resistivity of the deposited silicon wires.
James I. Mitchell, Se Jun Park, Charles A. Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, Eric A. Stach, Chen Yang, Xianfan Xu, "Laser direct write of silicon nanowires," Optical Engineering 50(10), 104301 (1 October 2011). https://doi.org/10.1117/1.3630225


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