1 February 2011 Nonlinear switching in silicon-based ring resonators
Author Affiliations +
Optical Engineering, 50(2), 024601 (2011). doi:10.1117/1.3533033
In this paper, we analyzed and investigated the nonlinear switching characteristics of an optical device using a double-coupler silicon ring resonator in the presence of the linear losses, the Kerr nonlinearity, two-photon absorption, thermo-optic effects, free-carrier-induced absorption, and dispersion. Results obtained have shown that the general features of the nonlinear switching of the throughput and drop port signals are similar to a single-couple ring and nonlinear Fabry-Perot resonators, respectively. The interesting results of the double-coupler silicon ring resonator are the low switching power conditions and the linear amplification gain. The various applications can be provided by controlling the input-output of silicon-based resonators, for instance, by controlling the coupling ratio, free-carrier lifetime, and input wavelength, in which the multiple applications for optical switches, logic gates, and memories can be provided.
Channarong Kusalajeerung, Surasak Chiangga, Santad Pitukwongsaporn, Preecha P. Yupapin, "Nonlinear switching in silicon-based ring resonators," Optical Engineering 50(2), 024601 (1 February 2011). https://doi.org/10.1117/1.3533033


Ultra fast and ultra small photonic crystal quantum dot all...
Proceedings of SPIE (September 16 2005)
Integrated Optics For Optical Computing
Proceedings of SPIE (November 10 1987)
Nonlinear Multiple Quantum Well Waveguide Devices
Proceedings of SPIE (September 22 1987)

Back to Top