1 April 2011 Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology
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Abstract
A silicon p-i-n diode Mach-Zehnder optical modulator integrated with grating couplers is fabricated in 0.18-μm complementary metal oxide semiconductor technology. The device has an ultracompact length of 200 μm. High modulation efficiency with a figure of merit of VπL = 0.22 V mm is demonstrated. A novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 Gbps is present.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Haihua Xu, Haihua Xu, Zhiyong Li, Zhiyong Li, Yu Zhu, Yu Zhu, Yuntao Li, Yuntao Li, Yude Yu, Yude Yu, Jinzhong Yu, Jinzhong Yu, } "Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology," Optical Engineering 50(4), 044001 (1 April 2011). https://doi.org/10.1117/1.3560264 . Submission:
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