1 July 2011 Nanoplasmonic optical switch based on Ga-Si3N4-Ga waveguide
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Abstract
In this paper, we propose an optical switch based on a metal-insulator-metal plasmonic waveguide with Si3N4 core sandwiched between two gallium (Ga) metal layers. Combining the unique structural phase transition property of gallium, within a total length of only 400 nm, an extinction ratio as high as 7.68 dB can be achieved in the proposed nanoplasmonic structure. The phase transition may be achieved by changing the temperature of the waveguide or by external light excitation.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Wangshi Zhao, Zhaolin Lu, "Nanoplasmonic optical switch based on Ga-Si3N4-Ga waveguide," Optical Engineering 50(7), 074002 (1 July 2011). https://doi.org/10.1117/1.3595868 . Submission:
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