1 August 2011 Etching of a polyethersulfone film using a XeCl laser
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Abstract
In this paper laser ablation of a polyethersulfone (PES) film using a XeCl laser was investigated. It was found that the dominant mechanism in the laser ablation of PES is photothermal. An effective absorption coefficient of 6.5 × 104 cm−1 was obtained from fitting the Arrhenius curve with experimental data.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Hedieh Pazokian, Hedieh Pazokian, Mahmoud Mollabashi, Mahmoud Mollabashi, Saeid Jelvani, Saeid Jelvani, Shahryar Abolhoseini, Shahryar Abolhoseini, Jalal Barzin, Jalal Barzin, } "Etching of a polyethersulfone film using a XeCl laser," Optical Engineering 50(8), 084301 (1 August 2011). https://doi.org/10.1117/1.3609008 . Submission:
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