13 March 2012 Analysis of carrier dynamic effects in transistor lasers
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We present an analytical model to analyze the influence of carrier dynamics on the static and dynamic responses of transistor laser (TL). Our analysis is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. We show that the details of the dc and small signal behavior of transistor lasers are strongly affected by the escape and capture times of carriers in quantum well (QW). Also, the effects of carrier recombination lifetime in the quantum well and base regions on the TL static and dynamic performances are investigated.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ashkan Horri, Seyedeh Zahra Mirmoeini, Rahim Faez, "Analysis of carrier dynamic effects in transistor lasers," Optical Engineering 51(2), 024202 (13 March 2012). https://doi.org/10.1117/1.OE.51.2.024202 . Submission:

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