29 March 2012 Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current
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Abstract
We report on the temperature-dependent extension of n-type inversion regions in mercury cadmium telluride (HgCdTe) photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multidoped HgCdTe due to the freeze-out effect as the temperature decreases. Consequently, hole concentration is much lower than electron concentration at 87 K. The n-type inversion region extension is shown to be caused with the p-to-n type conversion.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Yongguo Chen, Yongguo Chen, Weida Hu, Weida Hu, Xiaoshuang Chen, Xiaoshuang Chen, Zhenhua Ye, Zhenhua Ye, Jun Wang, Jun Wang, Xiaofang Wang, Xiaofang Wang, Chenhui Yu, Chenhui Yu, Wei Lu, Wei Lu, } "Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current," Optical Engineering 51(3), 036401 (29 March 2012). https://doi.org/10.1117/1.OE.51.3.036401 . Submission:
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