10 May 2012 Single-heterostructure laser diode producing a 6  W/40  ps optical pulse from a 20 μm stripe width
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Abstract
A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) single-spike lasing pulses with 6 Watts peak power from a 20 μm stripe width is realized in the form of a simple single-heterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p+ and n+ sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20  A/2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Brigitte Lanz, Brigitte Lanz, Juha T. Kostamovaara, Juha T. Kostamovaara, Sergey N. Vainshtein, Sergey N. Vainshtein, Vladimir M. Lantratov, Vladimir M. Lantratov, Nikolay Kalyuzhnyy, Nikolay Kalyuzhnyy, } "Single-heterostructure laser diode producing a 6  W/40  ps optical pulse from a 20 μm stripe width," Optical Engineering 51(5), 050503 (10 May 2012). https://doi.org/10.1117/1.OE.51.5.050503 . Submission:
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