7 January 2013 Intersubband absorption properties of GaAs/AlxGa1−xAs asymmetric quantum well based on optical difference frequency
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Abstract
Al0.5Ga0.5As/GaAs/Al0.2Ga0.8As multiple asymmetric quantum well (AQW) have been investigated based on optical difference frequency in the 9 to 11 μm region. Under an intense resonant excitation from a dual-wavelength CO2 laser, the saturation intensity of intersubband absorption for pump waves is estimated to be 0.3  MW/cm2. As the well width variation, the position of absorption peak for pump waves and the absorption of terahertz (THz) wave by DFG show concomitant changes. For an AQW of 7 nm deep well-width and 27 nm total well-width, the maximum of absorption for the THz wave is 6.01×105  m−1 when the two pump wavelengths are 9.69 and 10.64 μm, respectively. These manipulative transitions in AQW can be applied to tunable optical semiconductor devices and implemented in THz wave devices to achieve additional functionalities.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Xiao-Long Cao, Xiao-Long Cao, Jian-Quan Yao, Jian-Quan Yao, Kai Zhong, Kai Zhong, Degang Xu, Degang Xu, } "Intersubband absorption properties of GaAs/AlxGa1−xAs asymmetric quantum well based on optical difference frequency," Optical Engineering 52(1), 014001 (7 January 2013). https://doi.org/10.1117/1.OE.52.1.014001 . Submission:
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