Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 μm

Shilian Yan; Ling Zhang; Haijuan Yu; Menglong Li; Wei Sun; Wei Hou; Xuechun Lin; Yonggang Wang; Yishan Wang

doi:10.1117/1.OE.52.10.106107

18 October 2013 Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 μm

Shilian Yan, Ling Zhang, Haijuan Yu, Menglong Li, Wei Sun, Wei Hou, Xuechun Lin, Yonggang Wang, Yishan Wang

Author Affiliations +

Optical Engineering, Vol. 52, Issue 10, 106107 (October 2013). https://doi.org/10.1117/1.OE.52.10.106107

Abstract

We demonstrated a passively Q-switched Nd:YAG laser operating at 1.319 μm using a transmission-type single-wall carbon nanotube (SWCNT) as the saturable absorber. This is the first report on using SWCNT as a Q-switcher for 1.319 μm Nd:YAG laser in a side-pumped configuration. A maximum output power of 780 mW was obtained with 1.15-μs pulse duration and 42.7-kHz repetition rate.

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Shilian Yan, Ling Zhang, Haijuan Yu, Menglong Li, Wei Sun, Wei Hou, Xuechun Lin, Yonggang Wang, and Yishan Wang "Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 μm," Optical Engineering 52(10), 106107 (18 October 2013). https://doi.org/10.1117/1.OE.52.10.106107

Published: 18 October 2013

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