15 March 2013 Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging
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Abstract
It is shown that electron heating by electromagnetic radiation in mercury-cadmium-telluride (MCT) layers can be used for designing of uncooled terahertz (THz)/sub-THz detectors with appropriate for active imaging characteristics (noise equivalent power ∼2.6×10 −10   W/Hz 1/2 at ν140  GHz ) and these detectors can be manufactured within well established MCT technologies. This narrow-gap semiconductor can be considered as a material for THz/sub-THz detectors with possibility to be assembled into arrays. The characteristics of those detectors can be controlled and improved by selection of parameters of initial layers, substrate properties, and antenna configuration. For field effect transistor detectors, even for transistors with rather long channels (∼1  μm ), rather similar characteristics at ν140  GHz can also be obtained.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Fedir F. Sizov, Fedir F. Sizov, Vyacheslav V. Zabudsky, Vyacheslav V. Zabudsky, Aleksandr G. Golenkov, Aleksandr G. Golenkov, Anya Shevchik-Shekera, Anya Shevchik-Shekera, } "Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging," Optical Engineering 52(3), 033203 (15 March 2013). https://doi.org/10.1117/1.OE.52.3.033203 . Submission:
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