19 August 2013 Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations
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Abstract
A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at λ=1550  nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ=19  V×cm allowing the design of shorter devices with respect to p-i-n structure.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Sandro Rao, Sandro Rao, Giuseppe Coppola, Giuseppe Coppola, Caterina Summonte, Caterina Summonte, Mariano A. Gioffrè, Mariano A. Gioffrè, Francesco G. Della Corte, Francesco G. Della Corte, "Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations," Optical Engineering 52(8), 087110 (19 August 2013). https://doi.org/10.1117/1.OE.52.8.087110 . Submission:
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