15 April 2013 Optimization of the planar microcavity structure in bottom-emitting gallium nitride light-emitting diode
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Abstract
An optimized microcavity structure is proposed to enhance the emission efficiency of the bottom-emitting gallium nitride (GaN) light emitting diode. This structure contains a SiO 2 layer below the n -GaN layer to enhance transmission through the bottom layer and a SiO [sub]2 /Ag reflector coated on the p -GaN layer to raise the reflection on the upper surface of the GaN layer. The thicknesses of the two SiO 2 layers are optimized to improve the light extraction efficiency and internal quantum efficiency. The 200-nm-thick p -GaN layer signifies high current injection efficiency. The calculations reveal that the TM-polarized intensity in the normal direction from the optimized sample is about eight times stronger than that from the reference sample. Our designation offers the advantages of simplifying the fabricating process and reducing the manufacturing cost.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Haosu Zhang, Haosu Zhang, Jun Zhu, Jun Zhu, Guofan Jin, Guofan Jin, Zhendong Zhu, Zhendong Zhu, } "Optimization of the planar microcavity structure in bottom-emitting gallium nitride light-emitting diode," Optical Engineering 52(9), 091715 (15 April 2013). https://doi.org/10.1117/1.OE.52.9.091715 . Submission:
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