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9 October 2014 Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
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Abstract
Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2014/$25.00 © 2014 SPIE
Burak Tekcan, Cagla Ozgit-Akgun, Sami Bolat, Necmi Biyikli, and Ali K. Okyay "Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures," Optical Engineering 53(10), 107106 (9 October 2014). https://doi.org/10.1117/1.OE.53.10.107106
Published: 9 October 2014
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