25 November 2014 pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth high-voltage CMOS with 1.2-GHz bandwidth
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Abstract
A pn-junction photodiode with a bandwidth in the GHz range is presented. This photodiode is fabricated in a standard 0.35‐μm high-voltage CMOS process with deep n-wells which can isolate negative substrate potentials down to −100  V from the MOS transistors. This photodiode can, therefore, be implemented together with circuits on the same chip. At a reverse bias voltage of −90  V, a bandwidth of 1.2 GHz was measured for 670-nm light. The breakdown voltage of this photodiode is about −180  V.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Reinhard Enne, Bernhard Steindl, Kerstin Schneider-Hornstein, Horst Zimmermann, "pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth high-voltage CMOS with 1.2-GHz bandwidth," Optical Engineering 53(11), 116114 (25 November 2014). https://doi.org/10.1117/1.OE.53.11.116114 . Submission:
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