3 December 2014 Performance of chemical vapor deposition fabricated graphene absorber mirror in Yb3+ : Sc2SiO5 mode-locked laser
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Abstract
A reflective graphene saturable absorber mirror (SAM) was successfully fabricated by chemical vapor deposition technology. A stable diode-pumped passively mode-locked Yb3+:Sc2SiO5 laser using a graphene SAM as a saturable absorber was accomplished for the first time. The measured average output power amounts to 351 mW under the absorbed pump power of 12.5 W. Without prisms compensating for dispersion, the minimum pulse duration of 7 ps with a repetition rate of 97 MHz has been obtained at the central wavelength of 1063 nm. The corresponding peak power and the maximum pulse energy were 516 W and 3.6 nJ, respectively.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Wei Cai, Wei Cai, Yaqi Li, Yaqi Li, Hongtong Zhu, Hongtong Zhu, Shouzhen Jiang, Shouzhen Jiang, Shicai Xu, Shicai Xu, Jie Liu, Jie Liu, Lihe Zheng, Lihe Zheng, Liang-Bi Su, Liang-Bi Su, Jun Xu, Jun Xu, } "Performance of chemical vapor deposition fabricated graphene absorber mirror in Yb3+ : Sc2SiO5 mode-locked laser," Optical Engineering 53(12), 126103 (3 December 2014). https://doi.org/10.1117/1.OE.53.12.126103 . Submission:
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