22 December 2014 Analysis and simulation of ring resonator silicon electro-optic modulators based on PN junction in reverse bias
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Abstract
The theory of silicon optical modulators of ring resonators based on PN diode in reverse bias is primarily discussed. It secondarily provides a full-featured simulator to investigate the behavior of such modulators. Wave equation for ring structure will be solved by using the conformal transformation method and the matrix method as it was used to analyze bent planar optical waveguides. Power coupling between ring and straight waveguides will be calculated by coupled theory of nonparallel waveguides based on experimental results. The time response demonstrates the capability of this device to operate correctly at up to 10  Gbs−1 bitrate, and the frequency spectrum analysis of device shows a <17  dB drop in transmission at the resonant wavelength of ∼1574.9  nm.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Omid Jafari, Mahmood Akbari, "Analysis and simulation of ring resonator silicon electro-optic modulators based on PN junction in reverse bias," Optical Engineering 53(12), 127106 (22 December 2014). https://doi.org/10.1117/1.OE.53.12.127106 . Submission:
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