5 May 2014 InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides
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Abstract
Heterogeneous integration of III–V materials with silicon-on-insulator (SOI) waveguide circuitry by an adhesive die-to-wafer bonding process has been proposed as a solution to Si-based lasers and photodetectors. Here, we present the design and optimization of an InGaAs PIN photodetector vertically coupled with the underlying SOI waveguide, which could be readily fabricated using this bonding process. With the help of grating couplers, a thick bonding layer of 2.5
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Zhiqi Wang, Zhiqi Wang, Chao Qiu, Chao Qiu, Zhen Sheng, Zhen Sheng, Aimin Wu, Aimin Wu, Xi Wang, Xi Wang, Shichang Zou, Shichang Zou, Fuwan Gan, Fuwan Gan, } "InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides," Optical Engineering 53(5), 057101 (5 May 2014). https://doi.org/10.1117/1.OE.53.5.057101 . Submission:
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