20 June 2014 Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode
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Abstract
Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10 −6   per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Yixin Zhang, Yixin Zhang, Xuping Zhang, Xuping Zhang, Yuanlei Shi, Yuanlei Shi, Zhoufeng Ying, Zhoufeng Ying, Shun Wang, Shun Wang, } "Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode," Optical Engineering 53(6), 067102 (20 June 2014). https://doi.org/10.1117/1.OE.53.6.067102 . Submission:
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