Interfacial properties of Ga-doped ZnO thin films on Si

David C. Look; Bruce B. Claflin; Arnold M. Kiefer; Kevin D. Leedy

doi:10.1117/1.OE.53.8.087108

Abstract

Ga-doped ZnO films of thicknesses 3 to 500 nm were grown on Si at 200°C by pulsed-laser deposition in 10 mTorr of Ar. Sheet carrier concentration ns and mobility μ were measured at room temperature by the Hall effect and were fitted, respectively, to the equations n s (d)=n(∞)(d−δd) and μ(d)=μ(∞)/[1+d ∗ /(d−δd)] , where n(∞) is the predicted volume carrier concentration at d=∞ (the bulk value), δd is the thickness of the dead layer (if any), μ(∞) is the predicted mobility at d=∞ , and d ∗ is a figure of merit for the electrical properties of the interface. The fitted values of d ^∗[/sup] and δd were ∼23 and ∼11 nm , respectively. X-ray reflectance results were consistent with an ∼3-nm -thick interfacial layer of significantly lower density than that of bulk ZnO. X-ray photoelectron spectroscopy measurements showed an ∼10-nm -thick interfacial region in which the Ga peaks at ∼3.8% , well above the average value of 2.4% found in the bulk of the film.

Citation Download Citation

David C. Look, David C. Look, Bruce B. Claflin, Bruce B. Claflin, Arnold M. Kiefer, Arnold M. Kiefer, Kevin D. Leedy, Kevin D. Leedy, } "Interfacial properties of Ga-doped ZnO thin films on Si," Optical Engineering 53(8), 087108 (26 August 2014). https://doi.org/10.1117/1.OE.53.8.087108 . Submission:

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