5 November 2015 Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor
Author Affiliations +
Abstract
We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120  A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500  fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550  mVpp and the overall transimpedance is 260  kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of −30.3  dBm at a bit error rate <10−9.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Tomislav Jukić, Tomislav Jukić, Bernhard Steindl, Bernhard Steindl, Reinhard Enne, Reinhard Enne, Horst Zimmermann, Horst Zimmermann, } "Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor," Optical Engineering 54(11), 110502 (5 November 2015). https://doi.org/10.1117/1.OE.54.11.110502 . Submission:
JOURNAL ARTICLE
4 PAGES


SHARE
Back to Top