18 November 2015 Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes
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Abstract
This study reports on the development and testing of a cost- and time-effective means to optimize a double-sided hemispherical patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit hemisphere for LEDs that are fabricated on a hemispherical PSS. Results show that the LEE of LED flip chip could be enhanced with the optimized hemispherical PSS by over 0.508 and is ∼115.3% higher than that of flip-chip LEDs with non-PSS. This study confirms the high efficiency and excellent capability of the optimized hemispherical PSS pattern to improve LED efficacy.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Zhen Che, Zhen Che, Jun Zhang, Jun Zhang, Xinyu Yu, Xinyu Yu, Mengyuan Xie, Mengyuan Xie, Jianhui Yu, Jianhui Yu, Huihui Lu, Huihui Lu, Yunhan Luo, Yunhan Luo, Heyuan Guan, Heyuan Guan, Zhe Chen, Zhe Chen, } "Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes," Optical Engineering 54(11), 115108 (18 November 2015). https://doi.org/10.1117/1.OE.54.11.115108 . Submission:
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