2 November 2015 Sensitivity analysis of silicon-on-insulator quadruple Vernier racetrack resonators
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Abstract
We present a theoretical sensitivity analysis of silicon-on-insulator quadruple Vernier racetrack resonators based on varying, one at a time, various fabrication-dependent parameters. These parameters include the waveguide widths, heights, and propagation losses. We show that it should be possible to design a device that meets typical commercial specifications while being tolerant to changes in these parameters.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Robert Boeck, Lukas Chrostowski, Nicolas A. F. Jaeger, "Sensitivity analysis of silicon-on-insulator quadruple Vernier racetrack resonators," Optical Engineering 54(11), 117102 (2 November 2015). https://doi.org/10.1117/1.OE.54.11.117102 . Submission:
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