10 December 2015 Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors
Author Affiliations +
Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap “HgCdTe” semiconductor have been discussed. This mercury–cadmium–telluride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive “CdZnTe” or “GaAs” substrates, with bow-type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10  μm IR photoconductors. Their room temperature noise equivalent power at the frequency ν140  GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ∼0.1  μm) globar illumination reached the following values; ∼4.5×1010  W/Hz1/2 and ∼50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Fedir F. Sizov, Zinoviia F. Tsybrii, Vyacheslav V. Zabudsky, Oleksandr G. Golenkov, Volodymyr A. Petryiakov, Sergey A. Dvoretsky, Nikolai Michailov, Anna V. Shevchik-Shekera, Ihor O. Lysiuk, Ernesto Dieguez, "Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors," Optical Engineering 54(12), 127102 (10 December 2015). https://doi.org/10.1117/1.OE.54.12.127102 . Submission:


MCT as sub-terahertz and infrared detector
Proceedings of SPIE (May 13 2015)
Status Of HgCdTe Detector Technology
Proceedings of SPIE (December 09 1983)
Mm and THz waves detector on the base of...
Proceedings of SPIE (April 29 2009)

Back to Top