10 December 2015 Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors
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Optical Engineering, 54(12), 127102 (2015). doi:10.1117/1.OE.54.12.127102
Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap “HgCdTe” semiconductor have been discussed. This mercury–cadmium–telluride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive “CdZnTe” or “GaAs” substrates, with bow-type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10  μm IR photoconductors. Their room temperature noise equivalent power at the frequency ν140  GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ∼0.1  μm) globar illumination reached the following values; ∼4.5×1010  W/Hz1/2 and ∼50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Fedir F. Sizov, Zinoviia F. Tsybrii, Vyacheslav V. Zabudsky, Oleksandr G. Golenkov, Volodymyr A. Petryiakov, Sergey A. Dvoretsky, Nikolai Michailov, Anna V. Shevchik-Shekera, Ihor O. Lysiuk, Ernesto Dieguez, "Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors," Optical Engineering 54(12), 127102 (10 December 2015). https://doi.org/10.1117/1.OE.54.12.127102


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