Over the last two decades, extensive research has been done to improve light-emitting diodes (LEDs) designs. Increasingly complex designs have necessitated the use of computational simulations which have provided numerous insights for improving LED performance. Depending upon the focus of the design and the scale of the problem, simulations are carried out using rigorous electromagnetic (EM) wave optics-based techniques, such as finite-difference time-domain and rigorous coupled wave analysis, or through ray optics-based techniques such as Monte Carlo ray-tracing (RT). The former are typically used for modeling nanostructures on the LED die, and the latter for modeling encapsulating structures, die placement, back-reflection, and phosphor downconversion. This paper presents the use of a mixed-level simulation approach that unifies the use of EM wave-level and ray-level tools. This approach uses rigorous EM wave-based tools to characterize the nanostructured die and generates both a bidirectional scattering distribution function and a far-field angular intensity distribution. These characteristics are then incorporated into the RT simulator to obtain the overall performance. Such a mixed-level approach allows for comprehensive modeling of the optical characteristic of LEDs, including polarization effects, and can potentially lead to a more accurate performance than that from individual modeling tools alone.