22 May 2015 Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors
Author Affiliations +
Abstract
An avalanche photodiode (APD) fabricated in 0.35  μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86  μm.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bernhard Steindl, Bernhard Steindl, Reinhard Enne, Reinhard Enne, Horst Zimmermann, Horst Zimmermann, } "Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors," Optical Engineering 54(5), 050503 (22 May 2015). https://doi.org/10.1117/1.OE.54.5.050503 . Submission:
JOURNAL ARTICLE
3 PAGES


SHARE
Back to Top