The characteristic matrix method in thin-film optical theory was used to calculate heterogeneous doped one-dimensional photonic crystals (1-D PCs), which were fabricated by alternate deposition of Te, ZnSe, and Si materials on a silicon wafer. The heterogeneous structure was adopted to broaden the photonic band gap, within which the low reflection valley was achieved by doping. Infrared spectrum tests showed that the average emissivities of the 1-D PC were 0.0845 and 0.281, corresponding, respectively, to the bands of 3 to 5 and 8 to 14 μm. Moreover, the emissivity was 0.45 over the 5 to 8 μm nonatmospheric window, and the reflectivity was 0.28 at the wavelength of 10.6 μm. The results indicated that the heterogeneous doped 1-D PC was able to selectively achieve low emissivities over infrared atmospheric windows and a low reflectivity for the CO2 laser, which exhibited remarkable competence in compatible infrared and laser stealth applications.