1 June 2016 Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology
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Abstract
Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6  μm pitch) and three guard ring widths (0.6, 1.1, and 1.6  μm). Each SPAD was implemented in an array, composed of 25 (5×5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6  μm pitch and 39.9% fill factor, and 1.45% for the structure with 25.6  μm pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hesong Xu, Lucio Pancheri, Leo H. C. Braga, Gian-Franco Dalla Betta, David Stoppa, "Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology," Optical Engineering 55(6), 067102 (1 June 2016). https://doi.org/10.1117/1.OE.55.6.067102 . Submission:
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