21 June 2016 Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) gate insulators fabricated by RF sputtering
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Abstract
A series of ZnO thin film transistors (TFTs) using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) (BZN) thin films as gate insulators by RF sputtering has been fabricated. The relations between the zinc content and performance of BZN thin films and ZnO-TFTs are studied. The electrical properties of the ZnO-TFTs with BZN gate insulators as a function of Zn content are discussed. The research results showed that excess Zn (5 mol.%) can significantly enhance the performance of BZN thin films and ZnO-TFTs, which is mainly attributed to the compensation of Zn volatility during fabrication of BZN thin films. At an applied electric field of 250  kV/cm, the leakage current density of BZN thin films with 5 mol.% excess Zn is approximately four order of magnitude lower than that of BZN thin films without excess Zn. The subthreshold and surface state density of ZnO-TFTs were decreased from 684 and 350  mV/dec to 4.5×1012 and 2×1012 cm2, respectively, as Zn content was increased.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Wei Ye, Wei Ren, Peng Shi, Zhuangde Jiang, "Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) gate insulators fabricated by RF sputtering," Optical Engineering 55(6), 067106 (21 June 2016). https://doi.org/10.1117/1.OE.55.6.067106 . Submission:
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