21 December 2015 Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber
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Abstract
We experimentally demonstrated a laser diode-pumped Q-switched Nd:GdTaO4 crystal laser at 1066 nm using a multilayer graphene oxide as the saturable absorber (GOSA). The GOSA is fabricated by transferring the liquid-phase-exfoliated GO nanosheets onto a K9 glass substrate. When the GOSA was inserted into the plano–plano laser cavity, a stable Q-switched laser operation is achieved with a maximum average output power of 0.382 W and repetition rate of 362 kHz. The shortest pulse duration is 194 ns and the single pulse energy is about 1.05 μJ.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bingyuan Zhang, Qi Song, Guoju Wang, Yajing Gao, Qingli Zhang, Minghong Wang, Wenjun Wang, "Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber," Optical Engineering 55(8), 081305 (21 December 2015). https://doi.org/10.1117/1.OE.55.8.081305 . Submission:
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