21 December 2015 Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber
Author Affiliations +
Abstract
We experimentally demonstrated a laser diode-pumped Q-switched Nd:GdTaO4 crystal laser at 1066 nm using a multilayer graphene oxide as the saturable absorber (GOSA). The GOSA is fabricated by transferring the liquid-phase-exfoliated GO nanosheets onto a K9 glass substrate. When the GOSA was inserted into the plano–plano laser cavity, a stable Q-switched laser operation is achieved with a maximum average output power of 0.382 W and repetition rate of 362 kHz. The shortest pulse duration is 194 ns and the single pulse energy is about 1.05 μJ.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bingyuan Zhang, Bingyuan Zhang, Qi Song, Qi Song, Guoju Wang, Guoju Wang, Yajing Gao, Yajing Gao, Qingli Zhang, Qingli Zhang, Minghong Wang, Minghong Wang, Wenjun Wang, Wenjun Wang, } "Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber," Optical Engineering 55(8), 081305 (21 December 2015). https://doi.org/10.1117/1.OE.55.8.081305 . Submission:
JOURNAL ARTICLE
4 PAGES


SHARE
RELATED CONTENT

Comparison of CW and Q switched laser action in Yb...
Proceedings of SPIE (October 05 2003)
Nd:CSB-laser pumped by laser diode array
Proceedings of SPIE (December 28 1998)

Back to Top