19 February 2016 Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber
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We demonstrate a passively Q-switched Yb3+-dopedScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4  μJ, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Dazhi Lu, Dazhi Lu, Zhongben Pan, Zhongben Pan, Rui Zhang, Rui Zhang, Tianxiang Xu, Tianxiang Xu, Ruilong Yang, Ruilong Yang, Bingchao Yang, Bingchao Yang, Zhongyuan Liu, Zhongyuan Liu, Haohai Yu, Haohai Yu, Huaijin Zhang, Huaijin Zhang, Jiyang Wang, Jiyang Wang, } "Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber," Optical Engineering 55(8), 081312 (19 February 2016). https://doi.org/10.1117/1.OE.55.8.081312 . Submission:


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