Model-free determination of optical constants: application to undoped and Ga-doped ZnO

David C. Look; Buguo Wang; Kevin D. Leedy

doi:10.1117/1.OE.56.3.034112

21 March 2017 Model-free determination of optical constants: application to undoped and Ga-doped ZnO

David C. Look, Buguo Wang, Kevin D. Leedy

Author Affiliations +

Optical Engineering, Vol. 56, Issue 3, 034112 (March 2017). https://doi.org/10.1117/1.OE.56.3.034112

Abstract

For single slabs of uniform material, such as bulk semiconductors, we derive closed-form expressions for absorption and reflection coefficients, α and R , respectively, in terms of measured reflectance and transmittance, R m and T m . The formula for α can replace the several commonly used approximations for α as a function of T m and in particular does not require α d ≫ 1 , where d is the thickness. Thus, it can be applied to weak impurity absorptions, such as Fe absorption in Fe-doped GaN. Finally, the real ( η ) and imaginary ( κ ) parts of the index of refraction ( n = η + i κ ) can be obtained from α and R and agree well with η and

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David C. Look, Buguo Wang, and Kevin D. Leedy "Model-free determination of optical constants: application to undoped and Ga-doped ZnO," Optical Engineering 56(3), 034112 (21 March 2017). https://doi.org/10.1117/1.OE.56.3.034112

Received: 12 December 2016; Accepted: 7 March 2017; Published: 21 March 2017

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