20 July 2017 Suppression of backside damage in nanosecond internal-focusing pulse laser dicing with wavefront modulation
Yu Takiguchi, Masaki Oyaizu, Makoto Nakano, Takashi Inoue, Haruyoshi Toyoda
Author Affiliations +
Abstract
Laser dicing with tightly focused nanosecond pulsed laser light inside a semiconductor wafer is a dry, debris-free dicing method achieved by the generation of thermal microcracks. This method has two practical issues: a dicing speed that is limited by the repetition rate of the pulsed laser and potential damage to integrated circuits on the wafer from excessive laser intensity due to insufficient beam divergence. By correcting aberrations and generating multiple beams via wavefront modulation, multiple focused beams inside the wafer will become sufficiently divergent to avoid undesirable potential laser damage. We confirmed these improvements by dicing sapphire wafers with a pulsed laser and a high-numerical-aperture objective lens.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2017/$25.00 © 2017 SPIE
Yu Takiguchi, Masaki Oyaizu, Makoto Nakano, Takashi Inoue, and Haruyoshi Toyoda "Suppression of backside damage in nanosecond internal-focusing pulse laser dicing with wavefront modulation," Optical Engineering 56(7), 077109 (20 July 2017). https://doi.org/10.1117/1.OE.56.7.077109
Received: 8 May 2017; Accepted: 29 June 2017; Published: 20 July 2017
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Pulsed laser operation

Modulation

Semiconducting wafers

Wavefronts

Laser induced damage

Semiconductor lasers

Aberration correction

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