15 July 2016 Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage
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Optical Engineering, 56(1), 011004 (2016). doi:10.1117/1.OE.56.1.011004
The role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Semyon Papernov, Alexei A. Kozlov, Lars Jensen, Stefan Günster, James B. Oliver, Heinrich Mädebach, Detlev Ristau, Chris Smith, "Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage," Optical Engineering 56(1), 011004 (15 July 2016). https://doi.org/10.1117/1.OE.56.1.011004

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