4 May 2017 Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors
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Abstract
We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5    μ m at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5    μ m and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5    μ m at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias, and a diffusion length of 0.3    μ m was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Chuan Jin, Jianxin Chen, Qingqing Xu, ChengZhang Yu, Li He, "Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors," Optical Engineering 56(5), 057102 (4 May 2017). https://doi.org/10.1117/1.OE.56.5.057102 . Submission: Received: 3 November 2016; Accepted: 19 April 2017
Received: 3 November 2016; Accepted: 19 April 2017; Published: 4 May 2017
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