4    μ m ) control of plasmonic resonance wavelength in Ga-doped ZnO" />
22 May 2017 Near-infrared (1 to 4    μ m ) control of plasmonic resonance wavelength in Ga-doped ZnO
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Abstract
The plasmonic resonance wavelength λ res in ZnO doped with 3 wt.% Ga 2 O 3 can be controlled over the range 1 to 4    μ m by simple furnace annealing in flowing Ar. For each annealing temperature T A , the reflectance R m and transmittance T m are measured over a wavelength range, λ = 185 to 3200 nm, (energy range, E = 6.7 to 0.387 eV), and the reflectance coefficient R is calculated from R m and T m . The value of λ res is t
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
David C. Look, Kevin D. Leedy, Gordon J. Grzybowski, Bruce B. Claflin, "Near-infrared (1 to 4    μ m ) control of plasmonic resonance wavelength in Ga-doped ZnO," Optical Engineering 56(5), 057109 (22 May 2017). https://doi.org/10.1117/1.OE.56.5.057109 . Submission: Received: 8 March 2017; Accepted: 1 May 2017
Received: 8 March 2017; Accepted: 1 May 2017; Published: 22 May 2017
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