30 August 2017 Simulation and optimization of optical performance of time-delay-integration complementary metal-oxide-semiconductor image sensor based on hybrid charge-digital accumulation architecture
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Abstract
An analytical model of hybrid accumulation architecture based on charge-domain and digital-domain time-delay-integration complementary metal-oxide-semiconductor image sensor (TDI-CIS) in the scanning direction is proposed. Optical performance of signal-noise-ratio, dynamic range, and modulation transfer function of the charge-domain, digital-domain, and hybrid accumulation scheme is simulated and analyzed. The synthetical evaluation target (SET) is defined to obtain the best performance under different distribution methods of the charge-domain and digital-domain at a fixed TDI stage for a hybrid accumulation scheme. According to the simulation results, the hybrid accumulation scheme whose charge-domain accumulation stage is 8 and digital-domain accumulation stage is 16 has the optimal SET, which is 12.99% higher than a 128-stage digital-domain accumulation scheme and 25% higher than the 128-stage charge-domain accumulation scheme.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jing Gao, Jing Gao, Rui Huang, Rui Huang, Kai-ming Nie, Kai-ming Nie, Jiangtao Xu, Jiangtao Xu, Yi Li, Yi Li, } "Simulation and optimization of optical performance of time-delay-integration complementary metal-oxide-semiconductor image sensor based on hybrid charge-digital accumulation architecture," Optical Engineering 56(8), 083108 (30 August 2017). https://doi.org/10.1117/1.OE.56.8.083108 . Submission: Received: 28 May 2017; Accepted: 9 August 2017
Received: 28 May 2017; Accepted: 9 August 2017; Published: 30 August 2017
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